超高频化合物数模混合电路研究报告

时间:2022-08-13 09:31:33

超高频化合物数模混合电路研究报告

摘 要:由于化合物半导体材料自身优良的特性,化合物半导体超高速集成电路成为引领超高频、大功率领域的一支重要的力量。但随着工作频率的升高和输出功率的不断增大,电路和系统的电磁耦合与热问题越来越突出。只有正确理解电、磁、热传输机理和耦合机制,解决信号完整性和电磁热兼容问题,才能突破超高频、大功率模块的瓶颈。该研究以超高频数混合电路信号完整性分析以及热效应的电磁场分析方法为研究重点,从超高频化合物数模混合电路的分析方法、设计方法和电路验证等方面入手,研究了化合物超高速电路信号完整性问题和系统的电磁兼容问题,提出了优化设计的理论与方法,建立了电路、电磁场、热场一体化的设计平台;提出了超高速数模混合电路“自顶而下”的设计流程,开发了超高速数模混合电路的体系结构,总结了时钟分布电路等关键路径及关键电路模块的物理分析和实现方法,设计实现了具有国际先进水平的超高速数模混合集成电路实例;研究了化合物半导体超高速器件和电路的辐照损伤机理和抗辐照性能,建立了可用于器件和电路分析的实用化模型。这些成果标志着我国化合物超高速半导体集成电路在本研究中实现了重要的突破,同时为我国相关领域的进一步发展提供了重要的理论指导和技术支持。

关键词:化合物半导体 数模混合集成电路 信号完整性

Abstract:In recent years, compound semiconductor ultra-high speed integrated circuits have emerged and been highlighted in ultra-high frequency, high-power field due to their superior material properties of high carrier mobility, high saturation drift velocity and low critical saturation electric field. But with the increase of the operating frequency and output power, circuit and system electromagnetic coupling and thermal issues become increasingly prominent. The correct understanding of heat transfer mechanism and electromagnetic coupling mechanisms are the key points to break through the bottleneck of ultra-high frequency, high-power circuits and module.In this project, particular emphasis is put on signal integrity analysis of UHF hybrid circuits and thermal effects of electromagnetic field analysis methods. The signal integrity problems and system electromagnetic compatibility problem of compound semiconductor ultra-high speed integrated circuits are investigated. An optimal design theory and methods are developed and a circuit, electromagnetic field, thermal field integrated design platform is established A "top- down" design flow for ultra- high-speed digital-analog hybrid circuit is proposed and the clock distribution circuit critical path is extracted. Based on the physical analysis and implementation methods, high level ultra-high speed integrated circuits are designed and implemented The mechanism of irradiation damage and radiation tolerance of compound semiconductor devices and circuits are studied. Novel device models are established for design and analysis of circuits which will be used in extreme environment. These results indicate the achievement of that high-speed compound semiconductor integrated in this project, which will provide an important theoretical guidance and technical support to the further development of related fields.

Key Words:Compound semiconductor;Mixed analog-digital circuit;Signal integrity analysis

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